Incorporating that material boosts transistor speeds above what's possible with ordinary semiconductors such as silicon.
What does XISTER stand for?
XISTER stands for Transistor
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Samples in periodicals archive:
This multi-gate transistor implementation is highly compatible with current manufacturing techniques, which improves our ability to put this technology into high-volume production.
In one of the biggest advancements in fundamental transistor design, Intel Corporation today revealed that it is using two dramatically new materials to build the insulating walls and switching gates of its 45 nanometer (nm) transistors.
That bests a Japanese team's 562 GHz transistor that had been in the top slot.
The team used these nanotube transistors to make the circuit revealed today.
Intel's research and development involving new types of transistors has resulted in further development of a tri-gate (3-D) transistor for high-volume manufacturing.
IBM expects the new transistor will drive communications chips to speeds of 100GHz within two years -- five times faster and four years sooner than recently-announced competitive approaches.
Intel Corporation today announced development of a new, ultra-fast, yet very low power prototype transistor using new materials that could form the basis of its microprocessors and other logic products beginning in the second half of the next decade.