Uenoyama et al have developed a method of manufacturing a perforated porous resin substrate with a low dielectric constant by perforating a porous fluoropolymer material and etching the perforation with a sodium/naphthalene solution.
What does Dk stand for?
Dk stands for Dielectric Constant
This definition appears very frequently and is found in the following Acronym Finder categories:
- Science, medicine, engineering, etc.
See other definitions of Dk
We have 15 other meanings of Dk in our Acronym Attic
- Death Knight (gaming)
- Deforest Kelley (actor)
- Democratic Kampuchea (Cambodia)
- Denmark (airline tax code)
- Design Kit
- Deutscher Kaiser (German Emperor)
- Diddy Kong (fictional character)
- Diffusionskonstante (German: diffusion constant; Oxygen Permeability of contact lenses)
- Direct Kick (soccer)
- Directie Kunsten (Dutch: direction for fine arts)
- Disbursing Clerk (USN rating)
- Discovery Kids (TV network)
- Dishonorable Kill (gaming, World of Warcraft)
- Display Keyboard
- Divine Knights (gaming clan)
- Don King (boxing promoter)
- Don Knotts (actor)
Samples in periodicals archive:
Some areas examined are low dielectric constant interdielectrics, preparation techniques for polymer dielectric materials, and high-K dielectrics in nanoscale MOSFETs.
The dielectric constant of the composite film was obtained from the capacitance of the composite film fabricated on the ITO glass, the area of the Au-electrode (1.
The extent of the reaction was proportional to the acrylonitrile concentration and the reaction time, as was the dielectric constant.
All these applications require reliable results of the dielectric constant of the wood species of interest.
The best end product so far, using 30% keratin by weight, has a lower dielectric constant than conventional semiconductor insulator materials such as silicon dioxide or polyimides.
low dielectric constant * high dimensional stability The R/flex 3000 family of thin-film, flexible, adhesiveless liquid crystalline polymer laminates was developed specifically for use as a core for single layer or to build up multi-layer constructions.
The company replaced the usual silicon dioxide in the transistor gate dielectric with nitrided hafnium silicate (HfSiON), a high dielectric constant (high-k) material, and confirmed its performance.