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Postal codes: USA: 81657, Canada: T5A 0A7

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What does USJ stand for?

Ultra Shallow Junction (semiconductor measurement)


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This definition appears very rarely and is found in the following Acronym Finder categories:

  • Science, medicine, engineering, etc.

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United States International Telecommunications Union Association
U-Bus System Interface Unit
United States International University
Uitpakken Spelen Inpakken Wegwezen (Dutch band)
Universal Society of the Integral Way
US Internet Wireless (Minnesota)
User Service Interface Working Group
User-System Interface Working Group
USinternetworking, Inc. (stock symbol)
User Interface Extensible Markup Language (computer programing)
Universal Studios Japan
Universidad San Jorge (San Jorge University; Spain)
Universitê Saint-Joseph (Beirut, Lebanon)
Universiti Subang Jaya (University of Subang Jaya, Kuala Lumpur, Malaysia)
University of Sri Jayawardenapura (Sri Lanka)
University School of Jackson (Jackson, TN)
Union Syndicale des Journalistes - Confédération Française Démocratique du Travail (France)
University of San Jose-Recoletos (Cebu City, Philippines)
United States Judo Association
United States-Japan Business Council

Samples in periodicals archive:
The selection of the GSD Ultra truly reflects the leadership position Axcelis' high current implant technology holds in the market, particularly for ultra shallow junction formation and other advanced low-energy implant applications," said Mike Luttati, COO of Axcelis.
On the junction scaling side, a unique ultra shallow junction scheme featured with an integrated diffusion barrier into boron doped SiGe (SiGe:B) strained p-MOSFETs is also been demonstrated.
The technology is seen as the most promising method of extending the viability of low energy implants, especially for the production of advanced ultra shallow junction (USJ) and dual poly gate (DPG) transistor structures.
The system's patented temperature measurement capability enables a broad temperature range from 300 degrees Celsius to 1200 degrees Celsius, giving device makers the ability to cover the full array of advanced thermal processing applications in transistor formation, including anneals for ultra shallow junctions, dry oxidation, silicides, shallow trench isolation (STI) oxides, and boron-doped phosphosilicate glass (BPSG) and titanium nitride (TiN) densification.
NASDAQ: ACLS) has received another order for its GSD Ultra ion implanter, a multi-wafer system used to produce ultra shallow junctions and other advanced transistor structures in semiconductor devices.
As chipmakers incorporate ultra shallow junctions and other advanced transistor structures into mainstream manufacturing, they require high current, low energy implant capabilities that allow them to produce these structures on a volume scale.
Introduced last year, the GSD Ultra has become the preferred high current implant system at chipmakers around the globe by offering a highly productive platform for producing ultra shallow junctions and other advanced transistor structures on a volume scale.
The new beamline shortens implant times to boost throughput and productivity, enabling chipmakers like Samsung to produce ultra shallow junctions and other advanced transistor structures on a high-volume scale.

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