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Key to the exceptional production efficiencies in the newly developed 50nm process is the use of a selective epitaxial growth transistor (SEG Tr).
However, focus is also on emerging technologies including SiGeC epitaxy for HBTs, germanium epitaxy, and devices requiring selective epitaxial growth (including SiGeC for a self-aligned HBT process).
Acronyms: SiGe: silicon germanium SiGeC: silicon germanium carbon SEG: selective epitaxial growth IC: integrated circuit HF: hydrofluoric acid