What does RRT stand for?

There is a trade-off in both former gold- and new platinum-doped diodes between forward voltage drop VF and reverse recovery time trr.

Advanced life-time control techniques results in an extra fast diode with a reverse recovery time of 15 microseconds and di/dt capability greater than 1000 amps per micro second, overall result in a 5.

IR's new FREDs have improved characteristics (50% lower reverse recovery current compared to the best competitive device, lower reverse recovery time and smaller conduction loss than 400V devices), and results in best-in-class performance with 3% lower losses than the industry-best 300V device and up to an 18% reduction in power loss when compared to the industry-best 400V ultrafast diode.

The maximum reverse recovery time for the body diodes in the L series devices is less than 250ns, and even shorter for lower-current devices.

The new ZVS-specific MOSFETs have an up to 70% reduction in diode reverse recovery time, or 250ns, compared to standard devices.

The new 70CRU04 ultrafast diode has a reverse recovery time of 32ns at full-rated current, enabling higher frequencies that can reduce the size and cost of magnetic components such as transformers and coils.

For example, the new ultrafast diode has a reverse recovery time of 26ms at full-rated current.

IR's new FREDs have improved characteristics (50% lower reverse recovery current compared to the best competitive device, lower reverse recovery time and smaller conduction loss than 400V devices), and results in best-in-class performance with 3% lower losses than the industry-best 300V device and up to an 18% reduction in power loss when compared to the industry-best 400V ultrafast diode.