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Memresistors, or memristors, have received the lion's share of attention, starting with the 2010 announcement that Hewlett Packard and Hynix Semiconductor of Seoul, Korea would collaborate to commercialize memristor technology in the form of Resistive Random Access Memory or RRAM.
After introducing semiconductor memories in general, they cover phase change memory, spin-transfer torque random access memory, resistive random access memory, memristors, and the future of nonvolatile memory.
The team led by Professor Keon Jae Lee created the fully functional flexible non-volatile resistive random access memory (RRAM) where a memory cell can be randomly accessed, written, and erased on a plastic substrate.
This recognition comes from the company's outstanding contributions toward the research, development, and commercialization of high performance magneto resistive random access memory (MRAM) integrated circuits.
FIGURE 9 CONSTUCTION OF RESISTIVE RANDOM ACCESS MEMORY