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Postal codes: USA: 81657, Canada: T5A 0A7

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What does PCM stand for?

Phase-Change Memory (non-volatile computer memory)


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This definition appears very rarely and is found in the following Acronym Finder categories:

  • Information technology (IT) and computers

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Samples in periodicals archive:
announced a breakthrough in the development of phase-change memory (PCM) today that has the potential to allow developers to stack multiple layers of PCM arrays in a single die, thereby greatly increasing the density of the nonvolatile memory medium.
announced a breakthrough in the development of phase-change memory that has the potential to allow developers to stack multiple layers of chips atop each other, thereby greatly increasing the density of the nonvolatile memory medium.
Called the phase-change memory (PCM), the idea was first proposed by physicists in the 1960s, but it took long for them to develop the chip.
Numonyx will design and supply non-volatile memory products to Virident based on both its current and future flash memory and Phase-Change Memory (PCM) products.
Ovonyx PCM technology uses a reversible phase-change memory process that provides for high performance, dense, array-addressed semiconductor memory technology that can be used as cost effective Flash and DRAM device replacements, as well as in embedded applications such as microcontrollers and reconfigurable MOS logic.
Ovonyx PCRAM technology uses a reversible phase-change memory process that provides for high performance, dense, array-addressed semiconductor memory technology that can be used as cost effective Flash and DRAM memory replacements, as well as in embedded applications such as microcontrollers and reconfigurable MOS logic.
Ovonyx PCRAM technology uses a reversible phase-change memory process that provides for high performance, dense, array-addressed semiconductor memory technology that can be used as cost effective Flash and DRAM memory replacements, as well as in embedded applications such as microcontrollers and reconfigurable MOS logic.
today announced the development of a new cell technology that will enable stable fabrication of phase-change memory while maintaining low-power operation performance.

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