The research focused on an inexpensive phase-change memory alloy composed of germanium, antimony and tellurium, called GST, for short.
What does PCM stand for?
PCM stands for Phase-Change Memory (non-volatile computer memory)
This definition appears very frequently and is found in the following Acronym Finder categories:
- Information technology (IT) and computers
See other definitions of PCM
We have 524 other meanings of PCM in our Acronym Attic
- Perfect Coverage Model
- Peripheral Control Module (military communications project)
- Personal Call Manager (telephones)
- Personal Car Mileage (New York)
- Personal Communication Magazine (IEEE)
- Personal Computer Magazine
- Personal Computer Module
- Personnel Contamination Monitor
- Phase Change Materials (intelligent textiles and fabrics)
- Phase Contrast Microscopy
Samples in periodicals archive:
Such a computer might use stacked chips for high volumes of processing, photonic interconnects for speedy connections with the chips, advanced tape systems for data storage, and phase-change memory technologies for holding data to be processed.
For the first time, scientists at IBM Research have demonstrated that a relatively new memory technology, known as phase-change memory (PCM), can reliably store multiple data bits per cell over extended periods of time.
Efforts to develop alternative non-volatile memory (NVM) technologies to floating gate NAND flash memory are currently underway, such as phase-change memory (PCM/PRAM), ferro-electric memory (FeRAM), magneto-resistive memory (MRAM), and resistive memory (ReRAM).
Micron currently sells flash storage and DRAM modules, and is also experimenting with new forms of memory such as phase-change memory andHybrid Memory Cube.
Samsung sees size and power benefits in phase-change memory (PCM), a memory type that is being pushed as a replacement for memory that goes into devices like mobile phones.
Called the phase-change memory (PCM), the idea was first proposed by physicists in the 1960s, but it took long for them to develop the chip.
Leti will present two papers on memory, including one on the impact of N-doping in GeTe to boost the data-retention performances of phase-change memory (PCM), and an in-depth study on the role of defects in the Al2O3 blocking layer for charge-trapped memories.