What does MBE stand for?

EPIR uses molecular beam epitaxy to produce state-of-the-art single- and multi-element infrared detectors packaged as detector/cooler assemblies, as well as HgCdTe wafers for infrared camera focal plane arrays.

So you don't have to grow chips at 320 degrees Celsius like you do when using molecular beam epitaxy," Berger said.

Contributors cover epitaxy by rapid thermal chemical vapor deposition, molecular beam epitaxy growth techniques, ultra-high vacuum and chemical vapor deposition, defects and diffusion in SiGe and stained Si, stability constraints in SiGe epitaxy, electronic properties of strained Si/SiGe and silicon alloys, carbon doping and contact metallization of SiGe, and selective etching techniques for SiGe/SI.

A low density of InGaAs quantum dots (QDs), semiconductor nanostructures with 10 nm to 20 nm dimensions, is grown on GaAs by molecular beam epitaxy.

is with molecular beam epitaxy, in which a very pure semiconductor is deposited in a slow, controlled fashion.

The crystal structure, which is called MCT, is grown precisely one atomic layer at a time in a vacuum chamber through the Molecular Beam Epitaxy process.

So you don't have to grow chips at 320 degrees Celsius like you do when using molecular beam epitaxy," Berger said.

They found that, contrary to the expectations of some device manufacturers, the oxidation rate did not depend on whether the initial layers were grown by molecular beam epitaxy or metalorganic chemical vapor deposition (MOCVD), the two methods most commonly used by the industry.