What does MO stand for?

This phase two contracts will focus on improving the yield and integration density of compound semiconductor and silicon complementary metal oxide semiconductor transistors fabricated on the same silicon wafer, funded by the Defense Advance Research Projects Agency.

7,396,401 B2 Merck Patent has received a patent for an effect pigment of uniform shape and size based on a flake-form, inorganic substrate comprised of inorganic flake-form substrates which are uniform in shape and size and have a circular or elliptical shape or a polygon Vn shape, where n=the number of corners and n>3, wherein the flake-form inorganic substrate is comprised of one or more metal oxides, and on the substrate one or more layers comprised of a metal oxide, metal oxide hydrates, metal suboxides, metal, metal fluorides, metal nitrides, metal oxynitrides or mixtures.

Metal oxide materials such as SnO2, ZnO, TiO2, WO2, Ga2O3, and others have been examined for gas sensing applications and for control of industrial processes.

Engineering teams from the two companies have been working closely together to port the processor design to Fujitsu's CS100 90 nm complementary metal oxide semiconductor (CMOS) process, which features transistors with a 40 nm physical gate length.

As the lateral feature sizes of complementary metal oxide semiconductor field-effect-transistors are scaled downward, the gate dielectric capacitance must be increased in order to maintain the same drive current.

Several commercial instruments make use of individual types of sensors, such as conductive polymer-based sensors or metal oxide gas sensors, to do this task.

An individual thermal cutoff on each metal oxide varistor protects against temporary overvoltage conditions and ensures clean end-of-life performance.

The company will develop a number of technologies including metal-oxide semiconductor (MOS/MOX), quartz micro balance (QMB), metal oxide semiconductor field effect (MOSFET) and metal silicon carbide (MISiC) technologies.