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What does MRAM stand for?

MRAM stands for Magnetic Random Access Memory


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This definition appears very rarely and is found in the following Acronym Finder categories:
  • Information technology (IT) and computers

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Other Resources:
We have 5 other definitions for MRAM in our Acronym Attic
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Modified Rheumatoid Activity Index (rheumatology)
Manpower, Reserve Affairs, Installations & Environment
Mental Retardation Attitude Inventory Revised (psychology)
Member of the Royal Architectural Institute of Canada
Multiple Reflection-Absorption Infrared Spectroscopy
Master Repairable Assembly List
McMaster RFID (Radio Frequency Identification) Applications Lab (Hamilton, Ontario, Canada)
Murfreesboro Rutherford Art League (Tennessee)
Ministry of Regional Administration and Local Government (Tanzania)
MacPhail Radial Arm Maze
Magnetoresistive Random Access Memory
Mineral Resources Authority of Mongolia (est. 1997)
Most Rapid Alternating Movement (neurology)
Multibank Random Access Memory
Mars Regional Atmospheric Modeling System (computerized atmospheric simulation)
Mathematics of Ramsey Theory
Malam Renungan AIDS Nusantara (Indonesian: Archipelago AIDS Candlelight Memorial)
Minimal Resource Allocating Network
Motorcycle Racing Association of Nevada
Multioperator Radio Access Network

Samples in periodicals archive:
Samsung Electronics today said it has acquired Grandis, maker of magnetic random access memory (MRAM) technology known as spin transfer torque (STT-RAM).
Magnetic Random Access Memory (MRAM) and Sensor Technology Company To Initiate Strategic Investor and Media Outreach TORONTO, Sept.
Among researchers quick to embrace the spin-torque approach are the developers of magnetic random access memory, or MRAM--which many data-storage specialists regard as the most promising memory chip of the future (SN: 12/18&25/04, p.
TowerJazz, the global specialty foundry leader, and Crocus Technology, a premier developer of Magnetic Random Access Memory (MRAM), today announced the successful completion of the first stage of integration of Crocus' Thermally Assisted Switching (TAS)-based MRAM technology into TowerJazz's 0.
com/) is focused on the development of magnetic random access memory (MRAM) and sensor technology.
In addition to phase-change memory, there's magnetic random access memory, or MRAM, based on the electron's inherent magnetic property of spin.
The two companies will collaborate in the commercial development of Magnetic Random Access Memory (MRAM), which uses a magnetic charge, not the normal electronic charge, to store data.
NIST staff have explored the use of rare-earth dopants to control the high-speed dynamics in magnetic thin films used in magnetic recording heads and magnetic random access memory (MRAM).

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