What does LER stand for?

SEMATECH researchers and research partners highlighted the key role the consortium has played in achieving significant advances in EUV resists, specifically through achieving 20 nm resist resolution images for chemically amplified resists and addressing the challenges of simultaneously meeting resolution, line edge roughness (LER), and sensitivity targets in a systematic way.

These differences are considered small enough that they may be accounted for by line edge roughness and uncertainty in matching the location of the cross section to the location of the CD-SEM image.

Using a unique column design and innovative new algorithms, PVM technology enables increasingly vital measurements to be made on the device, including line edge roughness, line edge width variation, and distinguishing open/closed contact holes.

Applied's family of APF films are currently in production for gate, STI, contact, capacitor formation, bitline and contact-to-source/drain patterning applications where they offer superior etch selectivity with the lowest stress and line edge roughness at the highest throughput density.

Applied's family of APF films are currently in production for gate, STI, contact, capacitor formation, bitline and contact-to-source/drain patterning applications where they offer superior etch selectivity with the lowest stress and line edge roughness at the highest throughput density.

The Dimension X3D AFM enhancements, which meet the International Technology Roadmap for Semiconductors (ITRS) requirements for mask critical dimension (CD) metrology, include improvements in CD precision, 3D profile metrology, and line edge roughness metrology to provide superior total cost of ownership.

With over 100 Applied Producer APF systems installed worldwide, APF films enable improved CD control and line edge roughness for the 45nm node and beyond.

At the Symposium and subsequent workshops, researchers showed dense lines and spaces below 30 nm, with good sensitivity (10-20mJ/cm2) and reasonable line edge roughness (4-6 nm).