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Specific topics discussed include gate dielectrics, the hot carrier effect, electromigration, negative bias temperature instability, plasma process-induced damage, and reliability of high-k gate dielectrics.
Yoshifumi Okamoto, general manager of Matsushita's EDA Group, added: "We worked with BTA Technology to develop what we consider to be the most complete, close forms solution for analyzing the impact of hot carrier effects on our designs and improving our design margins.
As silicon shrinks to DSM levels and circuit speeds increase, electromigration, metal oxide and hot carrier effects affect reliability.