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The Company is also acting to increase research and development activity for power transistors, or heterojunction field effect transistors (HFETs), to capitalize on its fundamental patents in this sector, which does not follow the fiber optic component demand cycle.
The company's growing family of general-purpose amplifiers (GPAs) based on InGaP heterojunction bipolar transistors (HBTs) and GaAs heterojunction field effect transistors (HFETs) covers a broad array of RF and microwave applications.
To achieve the new 60W C-Band's high power, Toshiba implemented its Heterojunction Field Effect Transistor (HFET) process technology.