They focus on MOSFETs implemented in high-mobility substrates such as germanium, silicon germanium, strained silicon, and ultra-thin germanium-on-insulator platforms combined with high-k insulators and metal-gate.
What does GOI stand for?
GOI stands for Germanium-On-Insulator
This definition appears somewhat frequently and is found in the following Acronym Finder categories:
- Science, medicine, engineering, etc.
See other definitions of GOI
We have 29 other meanings of GOI in our Acronym Attic
- Grand Opera House of the South (Crowley, LA)
- Great Oak High School (Temecula, California)
- Greater Oneonta Historical Society (est. 1939; Oneonta, NY)
- Governor's Office of Homeland Security and Emergency Preparedness
- Garden Oaks Home School Support Group (Houston, TX)
- Gain on Ignition
- Gate Oxide Integrity
- Gene of Interest
- General Operating Instruction
- German Overseas Institute (est. 1964)
Samples in periodicals archive:
com A supplier of advanced semiconductor wafer products and services based in Cardiff in the UK announced today the launch of extremely high quality germanium-on-insulator (GeOI) engineered substrates for high-performance devices.
Specifically, the company is installing epitaxial equipment in its pilot line facility and a full Smart Cut(TM) strained-silicon germanium-on-insulator (SGOI) and strained-silicon-on-insulator (sSOI) manufacturing line at its Bernin II site -- both located at Soitec's headquarters in Bernin, France.
It was originally developed for SOI wafers, but is applicable to a wide range of products from ultra-thin SOI to advanced heterostructures such as Germanium-on-Insulator and multi-layered stacked SOI wafers.
Through a groundbreaking collaborative agreement, the three companies will enable (1) fabrication of germanium-on-insulator (GeOI) substrates and (2) development of semiconductor devices on these substrates.
Isonics is involved in several customer-specific wafer development programs and is also prepared to undertake joint development programs in the areas of germanium-on-insulator, strained silicon, or silicon germanium wafers, as customer interest dictates.
We believe that next-generation layer-transfer products including ultra-thin SOI and heterogeneous wafer systems such as Germanium-on-insulator (GeOI) are responsible for the heightened interest in our plasma-bond technologies.
BUSINESS WIRE)--March 24, 2003 Silicon Genesis Corporation (SiGen), a leading developer of innovative Silicon-On-Insulator (SOI) wafer technologies, is producing and shipping Germanium-on-Insulator (GeOI) wafers using their state-of-the-art Plasma-Activated Bonding(TM) and Controlled Cleave Process(TM) to transfer a thin germanium layer onto an oxidized silicon wafer.