com announces that a new market research report is available in its catalogue: Global Gallium Nitride Semiconductor Devices Market 2012-2016 http://www.
What does GaN stand for?
GaN stands for Gallium Nitride
This definition appears very frequently and is found in the following Acronym Finder categories:
- Science, medicine, engineering, etc.
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We have 46 other meanings of GaN in our Acronym Attic
- Guanidinoacetate Methyltransferase
- General Aviation Manufacturers & Traders Associations, Ltd. (Buckinghamshire, England)
- Glasgow Academy of Musical Theatre Arts (Scotland)
- Gaston Agricultural Mechanical and Textile Restoration Association (Gaston, NC; farm machinery restoration group)
- Gateway Area Macintosh Users Group (St. Louis, MO)
- Georgia Association of Music Theorists
- Governance and Management of Urban Transport (University of Melbourne; Australia)
- Governance and Management Using Technology (California School Boards Association)
- Get AOL (America Online) Music Videos (freeware)
- Geodesic Acoustic Mode Zonal Flow
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com/research/k98qlj/global_gallium) has announced the addition of the "Global Gallium Nitride Semiconductor Devices Market 2012-2016" report to their offering.
com)-- Global Gallium Nitride Semiconductor Devices Market 2012-2016 ResearchMoz.
The company has tapped into a sweet spot in the tech industry, developing semiconductors from "exotic materials" such as gallium nitride.
Formed on a large diameter silicon substrate, the gallium nitride high electron mobility transistor (GaN-HEMT) achieves a world record transconductance rating of 350mS/mm, a maximum oscillation frequency of 115GHz and a current gain cut off frequency of 56GHz, which are all comparable to figures achieved on conventional silicon carbide (SiC) substrates.
These limitations have lead to research on alternative materials such as gallium nitride and aluminum gallium nitride.
While trying to make nanoscale wires of gallium nitride, he and Gao discovered that they had instead created tiny, hollow cylinders of carbon known as carbon nanotubes.
The technology enables very thin layers of so-called III-V semiconductor materials (which include gallium arsenide, indium phosphide, gallium nitride and other high performance / light-emitting compounds) to be grown on a silicon substrate.