STMicroelectronics, Soitec (Euronext) and CMP (Circuits Multi ProjetsA) today announced that ST s CMOS 28nm Fully Depleted Silicon-On-Insulator (FD-SOI) process, which uses innovative silicon substrates from Soitec, is now available for prototyping to universities, research labs and design companies through the silicon brokerage services provided by CMP.
What does FD-SOI stand for?
FD-SOI stands for Fully Depleted Silicon-On-Insulator (MOSFET type)
This definition appears somewhat frequently and is found in the following Acronym Finder categories:
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Samples in periodicals archive:
A unique ultra-thin electrical path using fully depleted silicon-on-insulator (FDSOI) technology is surrounded on three sides with nickel-silicide metal gates.
The company claims that the new transistors have been made possible due to Fully Depleted Silicon-on-Insulator technology.
28, 2002 EM Microelectronic announced today that it is ready to start producing a high-performance, ultra-low-voltage and ultra-low-power integrated circuit using fully depleted silicon-on-insulator (FD SOI).
These include fully depleted silicon-on-insulators, high-mobility CMOS based on strained silicon/silicon germanium (Si/SiGe) layers, vertical devices and double-/triple-gate and gate-all-around devices.