After a review of carbon-based materials concepts and basic physics, some areas explored include carbon nanotube field effect transistor models, graphene nanoribbon field effect transistors, bilayer and trilayer graphene nanoribbon transport modeling, and silicon nanowire field effect transistor modeling.
What does FET stand for?
FET stands for Field Effect Transistor
This definition appears very frequently and is found in the following Acronym Finder categories:
- Information technology (IT) and computers
See other definitions of FET
We have 88 other meanings of FET in our Acronym Attic
- Falange Española Tradicionalista (Spanish political party)
- Familial Essential Tremor
- Fast Ethernet Transceiver
- Federal Election Tribunal
- Federal Electoral Tribunal judiciary For electoral misconducts)
- Federal Excise Tax
- Fédération Espérantiste du Travail (French: Esperanto Federation of Labor)
- Female Engagement Team (US Marine Corps)
- FICS Ethics Test
Samples in periodicals archive:
Unlike standard transistors, which are like driving a car over a hill, the tunneling field effect transistor is more like tunneling through a hill, said Sean Rommel, associate professor of electrical and microelectronic engineering.
9781891121890 RF and microwave modeling and measurement techniques for compound field effect transistors.
A range of applications is foreseen for organic field effect transistors and organic light emitting diodes including, for instance, flexible displays and other low-cost flexible electronics.
CMOS is made of two types of transistors: positively-charged field effect transistors (PFETs), and negatively charged FETs (NFETs).
It is possible now to interface individual neurons with silicon microstructures in both directions," they say, "from silicon to neuron, by stimulation of a [membrane] spot, and from neuron to silicon, using a metalfree field effect transistor.
US Patent 8,169,022 was issued on May 1, 2012, and is entitled "Vertical Junction Field Effect Transistors and Diodes Having Graded Doped Regions and Methods of Making.
They have retained the basic physics of classic devices and added material on such areas of contemporary interest as three-dimensional MOSFETs (metal-oxide-semiconductor field-effect transistors), nonvolatile memory, modulation-doped field effect transistor, single-electron transistor, resonant-tunneling diode, insulated-gate bipolar transistor, quantum cascade laser, and semiconductor sensors.