What does EPMA stand for?

Topics include high-rate and low-temperature film growth technology using stable glow plasma at atmospheric pressure, fundamental processes in plasma-assisting sputtering deposition of silicon and aluminum thin films, thermoplasmonics in thin metal films, a quantification procedure for electron probe microanalysis of thin films on heterogeneous substrates, self-organized growth of polymer wire networks with designed molecular sequences for wavefunction- controlled nano-systems, nanoscale static and dynamic domain structures of ferroelectric thin films, dynamic functions of supramolecular elements embedded on thin films, phase diagram of the growth mode and surface morphology dynamics in layer epitaxial growth, and derivation of the Ruderman-Kittel-Kasuya-Yosida interaction in thin films.

Otoliths were assayed by using both electron probe microanalysis (EPMA) and laser ablation inductively coupled plasma mass spectrometry (ICP-MS).

DuPont de Nemours Experimental Station in Wilmington, DE where he became involved in x-ray fluorescence (XRF) but soon developed an interest in Electron Probe Microanalysis (EPMA) when DuPont purchased one of the first commercial Applied Research Laboratories (ARL) scanning electron microprobes.

Radiographic examination and electron probe microanalysis (EPMA) of an A16%Si.

Introduction In quantitative electron probe microanalysis with wavelength-dispersive (WD) spectrometers, the operator is faced with a wide range of options in setting up an analysis routine.

Remond, Electron probe microanalysis of oxygen in strongly insulating oxides, Microbeam Anal.

Introduction Calculations of average backscatter (or electron loss) for compounds in electron probe microanalysis (EPMA) have traditionally utilized mass fraction averaging (1).

1 Particle Analysis at Lower Electron Beam Energies In conventional electron probe microanalysis the accelerating voltage is generally in the range of 15 kV to 25 kV, which provides the necessary overvoltage and sufficient current from the thermionic source to excite efficiently the K and L x-ray lines for elements with atomic numbers as high as Z = 83.