What does BOX stand for?

Buried Oxide

This definition appears very rarely and is found in the following Acronym Finder categories:

Science, medicine, engineering, etc.

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Samples in periodicals archive:

SOI simplifies FinFET fabrication: the buried oxide layer acts as an etch-stop and isolates individual transistors; the fin height is a function of the substrate thickness.

United States: The SOI Industry Consortium Announces Results of a SOI ...

The SSDOI structure was created by transferring strained Si grown epitaxially, or layer by layer, on relaxed SiGe to a buried oxide layer.

IBM paves way for higher performing, lower power electronic devices ...

Leti also showed that fully depleted SOI (FDSOI) CMOS can be scaled down to the 10nm node through tuning the buried oxide and silicon layer thickness.

Leti's Planar-SOI Technology Meets Low-Power, 22nm Node Requirements, ...

The buried oxide layer acts as a barrier that reduces electrical leakage from the transistors, resulting in semiconductor devices that are faster and more power efficient.

Ibis Technology Announces Significant Improvement in Quality of ...

The buried oxide layer acts as a barrier that reduces electrical leakage from the transistors, resulting in semiconductor devices that are faster and more power efficient.

Ibis Technology Announces Customer Acceptance of Oxygen Implanter; ...

The SOI body thickness is 45nm on a 150nm buried oxide layer, and source/drain and gates are cobalt silicided.

Chipworks Discovers IBM Strain at 90nm, Delay in Low-k

The buried oxide layer acts as a barrier that reduces electrical leakage from the transistors, resulting in semiconductor devices that are faster and more power efficient.

Ibis Technology Announces Receipt of Order From a Leading Silicon ...

How IBM Created the First Transistor with Strained Silicon Directly on Insulator Technology The SSDOI structure was created by transferring strained Si grown epitaxially, or layer by layer, on relaxed SiGe to a buried oxide layer.

IBM Paves Way for Higher Performing, Lower Power Electronic Devices ...