What does BV stand for?

Breakdown Voltage

This definition appears very rarely and is found in the following Acronym Finder categories:

Science, medicine, engineering, etc.

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Samples in periodicals archive:

These devices feature breakdown voltages (BVDSS) of 150V and 200V, respectively, and will withstand the high pulse avalanche energy and commutation modes in the SLIC environment without the need for additional protection circuitry.

United States: Diodes Unveils MOSFETs Optimized for VoIP Applications

However, say the researchers, gallium nitride (GaN) has a much higher breakdown voltage, something that minimises such leaks, reports New Scientist magazine.

New transistors may reduce power leakage during 'AC to DC conversion' ...

Technological Challenges The power output required of power amplifiers for use in high-frequency applications, such as WiMAX, exceeds the breakdown voltage of transistors used with standard CMOS logic processes.

Fujitsu Develops CMOS Logic-Based High-Voltage Transistor for Power ...

In applications such as cell phones, the FDFME3N311ZT offers a 30V breakdown voltage to drive up to seven or eight white LEDs, depending on the LEDs selected and design guardband.

Fairchild Semiconductor's Boost Switch Delivers High Efficiency in ...

11um 30V process technology to better meet the increasing demand for high volume and high growth target applications such as mobile handsets etc" MagnaChip has combined the cost and device performance of the small chips with better leakage characteristics, high speed, more uniform and high isolation breakdown voltage and improved latch-up immunity.

India: MagnaChip offers 0.11um, 30V process technology with small ...

On the other hand, in trying to apply MMIC technology to GaN HEMTs which feature high operation voltages, the breakdown voltage of the chip capacitor has been insufficient.

Fujitsu Laboratories Develops C- to X- Ultra-Wideband Gallium-Nitride ...

The Dual N-Channel FMM modules are capable of accommodating drain to source breakdown voltages of 200V, 250V, 500V and 600V with drain current values from 12 amperes to 33 amperes.

IXYS Introduces Half-Bridge MOSFET Modules in ISOPLUS i4-PACTM

Taejin is said to have chosen Tower's power management process by recognizing its 20 V to 60 V scalable LDMOS which provides design optimization and the smallest die size at any given breakdown voltage.

Korea: Taejin picks up Tower Semi for IC deal