Future Plans Fujitsu Laboratories will continue refine this new technology to make it suitable for power-supply transistors by further increasing the breakdown voltage and lowering the on-state resistance, and will strive toward incorporation of this technology in IT products around 2015.
What does BV stand for?
BV stands for Breakdown Voltage
This definition appears very frequently and is found in the following Acronym Finder categories:
- Science, medicine, engineering, etc.
See other definitions of BV
We have 24 other meanings of BV in our Acronym Attic
- Bombeiros Voluntários (Portuguese: Volunteer Firemen Corporation)
- Bon Voyage (The Sims 2 Expansion Pack)
- Book Value
- Booking Value (sales commission calculation)
- Booster Vehicle (National Missile Defense ground based interceptor program)
- Bound Volume (printed collection)
- Boundary Value
- Bourn-Vita (Cadbury's drink)
- Bouvet Island
- Brachial Vein
Samples in periodicals archive:
Industry's First 100v Breakdown Voltage ESD Solution for High Power Solid State Lighting Applications MILPITAS, Calif.
MILPITAS, California, August 31 /PRNewswire/ -- - Industry's First 100v Breakdown Voltage ESD Solution for High Power Solid State Lighting Applications California Micro Devices (Nasdaq: CAMD) today announced the latest product in the LuxGuard(TM) family of turnkey solutions for ESD (electrostatic discharge) protection and thermal management for high power, high brightness light emitting diode (HBLED) lighting applications.
CPC7595 Offers Enhanced Ringing Test Switch Breakdown Voltage (320V) BEVERLY, Mass.
If the topmost layer is made of AlN, this results in a micro-cracked surface as shown in Figure 2a, which degrades the breakdown voltage.
today announced DN2470, a high voltage, N-channel depletion-mode MOSFET featuring a 700V breakdown voltage that provides protection against high voltage transients in normally closed solid-state relays, SMPS start-up circuits, converters and constant current sources.
2, respectively, the 30-V and 40-V devices offer nearly the same FOM for synchronous rectification applications while allowing the choice of the higher rating for applications that can use the additional headroom provided by the 40-V breakdown voltage device.
is generally known, today announced the development of a Gallium Nitride (GaN) power transistor with the ultra high breakdown voltage over 10000V.